Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires

被引：16

作者：

Chang, CY ^{[1
]}

Lan, TW

Chi, GC

Chen, LC

Chen, KH

Chen, JJ

Jang, SW

Ren, F

Pearton, SJ

机构：

[1] Natl Cent Univ, Dept Phys, Jhongli 320, Taiwan

[2] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

[4] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 05期

关键词：

D O I：

10.1149/1.2179187

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 [应用化学];

摘要：

We report studies on the effect of UV/ozone cleaning on n-type GaN nanowires prior to Ti/Al/Pt/Au ohmic contact deposition and the effect of annealing temperature on the total resistance of the contacted nanowires. The UV/ozone cleaning for periods of 1-5 min reduced surface carbon and oxygen contamination, as determined by Auger electron spectroscopy measurements and led to a specific contact resistivity of 1.8 x 10(-2) Omega cm(2) after annealing in the range 700-800 degrees C. After subtraction of this contact resistivity from the total resistance of the nanowires, it was found that the ozone treatment reduced the apparent resistivity from 71 to similar to 0.7 Omega cm. These results show the importance of surface cleaning in extracting the transport properties of GaN nanowires. (c) 2006 The Electrochemical Society.

引用

页码：G155 / G157

页数：3

共 33 条

[1]

Logic circuits with carbon nanotube transistors [J].