Formation and characterization of Ti-Si-N-O barrier films

被引：16

作者：

Ee, YC ^{[1
]}

Chen, Z

Law, SB

Xu, S

机构：

[1] Chartered Semicond Mfg Ltd, Technol & Dev Dept, Singapore 738406, Singapore

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Div Mat Sci, Singapore 639798, Singapore

[3] Nanyang Technol Univ, Plasma Sources & Applicat Ctr, NIE, Singapore 639798, Singapore

来源：

THIN SOLID FILMS | 2006年 / 504卷 / 1-2期

关键词：

Ti-Si-N-O; barrier; magnetron sputtering; bias temperature stressing;

D O I：

10.1016/j.tsf.2005.09.127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ti-Si-N-O barrier films are successfully formed by RE reactive magnetron Sputtering of Ti target with different SiH4 gas flow rate. Si/Ti ratio in the formed film is found to increase with increasing SiH4 gas flow rate. The film resistivity ranges from 3.63 x 10(3) mu Omega cm to 6.45 x 10(6) mu Omega cm due to microstructure variation. X-ray diffraction (XRD) of these films reveals the fort-nation of crystalline titanium nitrides, silicon nitrides and titanium silicide compounds. XPS further unveils that titanium oxide, silicon oxide, and silicon oxynitride compounds are present; however, these non-crystalline compounds are not detectable by XRD. High-resolution transmission electron microscopy (HRTEM) confirms that the film consists of Ti-N, Si-N, and Ti-Si nanocrystals embedded in amorphous matrix. This type of microstructure gives rise to very high stability against copper diffusion tinder bias temperature stressing (BTS) at 200 degrees C and 0.5 MV/cm. Furthermore, this process delivers a very smooth film with surface roughness (RMS) between 2.2 and 3.3 run. Field emission secondary electron microscopy (FESEM) shows a surface morphology of Ti-Si-N-O films with particles size less than 100 nm. By controlling the process parameters, we are able to control the properties of Ti-Si-N-O films as the diffusion property is behaved differently. (c) 2005 Elsevier B.V All rights reserved.

引用

页码：218 / 222

页数：5

共 10 条

[1]

Barin I., 2008, Thermochemical Data of Pure Substances, VThird

[2] Electroless copper deposition as a seed layer on TiSiN barrier [J].

Ee, YC ;

Chen, Z ;

Xu, S ;

Chan, L ;

See, KH ;

Law, SB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04) :1852-1856

[3]

EE YC, UNPUB J ELECTROCHEM

[4] Low temperature inorganic chemical vapor deposition of Ti-Si-N diffusion barrier liners for gigascale copper interconnect applications [J].

Eisenbraun, E ;

Upham, A ;

Dash, R ;

Zeng, WX ;

Hoefnagels, J ;

Lane, S ;

Anjum, D ;

Dovidenko, K ;

Kaloyeros, A ;

Arkles, B ;

Sullivan, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (04) :2011-2015

[5] The effects of HF/PdCl2 activation on electroless copper film properties [J].

Goh, WL ;

Tan, KT ;

Tse, MS ;

Liu, KY .

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (1-2) :197-204

[6] Metallorganic chemical vapor deposited TiN barrier enhancement with SiH4 treatment [J].

Marcadal, C ;

Eizenberg, M ;

Yoon, A ;

Chen, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (01) :C52-C58

[7] CVD TiSiN diffusion barrier integration in sub-130 nm technology nodes [J].

Prindle, C ;

Brennan, B ;

Denning, D ;

Shahvandi, I ;

Guggilla, S ;

Chen, L ;

Marcadal, C ;

Deyo, D ;

Bhandary, U .

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2002, :182-184

[8] TI-SI-N DIFFUSION-BARRIERS BETWEEN SILICON AND COPPER [J].

REID, JS ;

SUN, X ;

KOLAWA, E ;

NICOLET, MA .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (08) :298-300

[9] Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization [J].

Shalish, I ;

Shapira, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (01) :166-173

[10] Robert Frost and Stewart Udall, and the ''Last Go-Down'' [J].

Smith, TG .

NEW ENGLAND QUARTERLY-A HISTORICAL REVIEW OF NEW ENGLAND LIFE AND LETTERS, 1997, 70 (01) :3-32

← 1 →