TI-SI-N DIFFUSION-BARRIERS BETWEEN SILICON AND COPPER

被引：76

作者：

REID, JS

SUN, X

KOLAWA, E

NICOLET, MA

机构：

[1] California Institute of Technology, Pasadena

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 08期

关键词：

D O I：

10.1109/55.296222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of Ti-Si-N, reactively sputtered from a Ti5Si3 target, are assessed as diffusion barriers between silicon substrates and copper overlayers. By tests on shallow-junction diodes, a 100 nm Ti34Si23N43 barrier is able to prevent copper from reaching the silicon substrate during a 850-degrees-C/30 min anneal in vacuum. A 10 nm film prevents diffusion up to 650-degrees-C/30 min. By high-resolution transmission electron microscopy, Ti34Si23N43 predominantly consists of nanophase TiN grains roughly 2 nm in size.

引用

页码：298 / 300

页数：3

共 23 条

[1] ANALYTICAL ELECTRON-MICROSCOPY OF AL/TIN CONTACTS ON SILICON FOR APPLICATIONS TO VERY LARGE-SCALE INTEGRATED DEVICES [J].