High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs-GaAs-InGaAs-InAs heterostructure diode laser operation

被引：48

作者：

Walter, G ^{[1
]}

Chung, T

Holonyak, N

机构：

[1] Univ Illinois, Elect Engn Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Ctr Compound Semicond Microelect, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.1451989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented showing that a single-layer InAs quantum dot (QD) laser in the AlGaAs-GaAs-InGaAs-InAs heterostructure system is improved in gain and continuous wave (cw) room temperature operation by coupling, via tunneling, auxiliary strained-layer InGaAs quantum wells (QWs) to the single InAs QD layer to assist carrier collection and thermalization. A QW-assisted single-layer InAs QD laser, a QD+QW laser, is demonstrated that operates cw (300 K), and at diode length 150 mum in pulsed operation exhibits gain as high as similar to100 cm(-1). (C) 2002 American Institute of Physics.

引用

页码：1126 / 1128

页数：3

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