Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

被引：106

作者：

Lee, BH ^{[1
]}

Jeon, Y ^{[1
]}

Zawadzki, K ^{[1
]}

Qi, WJ ^{[1
]}

Lee, J ^{[1
]}

机构：

[1] Univ Texas, Ctr Mat Res, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 21期

关键词：

D O I：

10.1063/1.124089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of interfacial layer growth on reactively sputter-deposited TiO2 films were studied. Leakage current was reduced to 10(-8) A/cm(2) at 11 V after annealing in oxygen ambient and showed tunneling-like temperature dependence. As the interfacial layer grew, interface states and hysteresis were improved significantly. However, the reliability was degraded as the annealing temperature increased. (C) 1999 American Institute of Physics. [S0003-6951(99)03121-6].

引用

页码：3143 / 3145

页数：3

共 15 条

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