Observation of Gamma-X resonances in type-I GaAs/AlAs semiconductor superlattices: Anomaly in photoluminescence

被引：20

作者：

Hosoda, M ^{[1
]}

Mimura, H ^{[1
]}

Ohtani, N ^{[1
]}

Tominaga, K ^{[1
]}

Fujita, K ^{[1
]}

Watanabe, T ^{[1
]}

Inomata, H ^{[1
]}

Nakayama, M ^{[1
]}

机构：

[1] OSAKA CITY UNIV,DEPT APPL PHYS,SUMIYOSHI KU,OSAKA 558,JAPAN

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.55.13689

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the direct observation of Gamma-X resonances in type-I GaAs/AlAs semiconductor superlattices under an electric field. Photoluminescence (PL) associated with the first X-z state in the AlAs and the first Gamma heavy-hole state in the GaAs was found in type-I superlattices. The PL strongly increased its intensity due to Gamma-X mixing, by tuning the resonance between the X, state and the second Gamma-electron state in the adjacent GaAs layer. This observation gives clear evidence that Gamma-X scattering and mixing often occur even in type-I superlattices under an electric field.

引用

页码：13689 / 13696

页数：8

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