EVIDENCE FOR GAMMA-CHI TRANSPORT IN TYPE-I GAAS/ALAS SEMICONDUCTOR SUPERLATTICES

被引：30

作者：

HOSODA, M ^{[1
]}

OHTANI, N ^{[1
]}

MIMURA, H ^{[1
]}

TOMINAGA, K ^{[1
]}

DAVIS, P ^{[1
]}

WATANABE, T ^{[1
]}

TANAKA, G ^{[1
]}

FUJIWARA, K ^{[1
]}

机构：

[1] KYUSHU INST TECHNOL,DEPT ELECT ENGN,TOBATA KU,KITAKYUSHU 804,FUKUOKA,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.75.4500

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first evidence that the Gamma-X transfer mechanism plays a significant role in carrier transport in type-I semiconductor superlattices under an electric field. An anomalously delayed photocurrent was observed in a GaAs/AlAs type-I superlattice under ultrashort optical pulse excitation. This phenomenon can be explained by a switch of the electron transport path from Gamma-Gamma to Gamma-X-Gamma-X, caused by an electric-field induced change of the subband alignment of the second Gamma state (Gamma 2) in the well and the X1 state in the adjacent barrier.

引用

页码：4500 / 4503

页数：4

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