Efficiency of non-uniformly irradiated double-sided silicon strip detectors

被引：3

作者：

Dubbs, T ^{[1
]}

Kashigin, S ^{[1
]}

Kratzer, M ^{[1
]}

Kroeger, W ^{[1
]}

Pulliam, T ^{[1
]}

Sadrozinski, HFW ^{[1
]}

Schwab, M ^{[1
]}

Spencer, E ^{[1
]}

Wichmann, R ^{[1
]}

Wilder, M ^{[1
]}

Unno, Y ^{[1
]}

Ohsugi, T ^{[1
]}

机构：

[1] HIROSHIMA UNIV,HIROSHIMA,JAPAN

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

D O I：

10.1109/23.506652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the efficiency and the noise occupancy of a double-sided silicon strip detector, which was subjected to non-uniform proton irradiations up to a maximum equivalent fluence of 5 . 10(13)p . cm(-2). The depletion voltage, varying over time due to controlled annealing, was close to zero on one end of the 6cm strips and 190V at the high radiation end. We have determined the efficiency and noise occupancy on both n-side and p-side in a Ru-106 telescope, using a binary read-out system with 22ns shaping time. The n-side exhibits superior performance after type inversion.

引用

页码：1142 / 1145

页数：4

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