High reflectivity, low resistance Te doped AlGaAsSb/AlAsSb Bragg mirror

被引：11

作者：

Dias, IFL ^{[1
]}

Nabet, B ^{[1
]}

Kohl, A ^{[1
]}

Harmand, JC ^{[1
]}

机构：

[1] UNIV ESTADUAL LONDRINA,DEPT FIS,BR-86051 LONDRINA,PARANA,BRAZIL

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 08期

关键词：

vertical cavity surface emitting lasers; SURFACE-EMITTING LASERS;

D O I：

10.1049/el:19970483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a high quality n-type Te-doped AlGaAsSb/AlAsSb Bragg mirror lattice matched to InP grown by molecular beam epitaxy. A 99.8% reflectivity with a 190 nm stopband width centred at 1.51 mu m is obtained. An average voltage drop of 44 mV per period at a current density of 1 kA/cm(2) is observed for a mean electron concentration of similar to 3.5 x 10(18) cm(-3).

引用

页码：716 / 717

页数：2

共 8 条

[1] ELECTRICAL AND OPTICAL CHARACTERISTICS OF ALASSB/GAASSB DISTRIBUTED BRAGG REFLECTORS FOR SURFACE-EMITTING LASERS [J].

BLUM, O ;

HAFICH, MJ ;

KLEM, JF ;

LEAR, KL ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1995, 67 (22) :3233-3235

[2]

EBELING KJ, 1995, P 21 EUR C OPT COMM, P113

[3] MBE GROWTH OF GAINASSB/ALGAASSB DOUBLE HETEROSTRUCTURES FOR INFRARED DIODE-LASERS [J].

EGLASH, SJ ;

CHOI, HK ;

TURNER, GW .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :669-676

[4]

HARMAND JC, IN PRESS MOL BEAM EP

[5]

HARMAND JC, 1995, ELECTRON LETT, V31, P89

[6] BAND-GAP ENGINEERED DIGITAL ALLOY INTERFACES FOR LOWER RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

PETERS, MG ;

THIBEAULT, BJ ;

YOUNG, DB ;

SCOTT, JW ;

PETERS, FH ;

GOSSARD, AC ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1993, 63 (25) :3411-3413

[7]

SALE TE, 1995, VERTICAL CAVITY SURF, P129

[8] N-TYPE DOPING OF GALLIUM ANTIMONIDE AND ALUMINUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY USING LEAD-TELLURIDE AS A TELLURIUM DOPANT SOURCE [J].

SUBBANNA, S ;

TUTTLE, G ;

KROEMER, H .

JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) :297-303

← 1 →