ELECTRICAL AND OPTICAL CHARACTERISTICS OF ALASSB/GAASSB DISTRIBUTED BRAGG REFLECTORS FOR SURFACE-EMITTING LASERS

被引：23

作者：

BLUM, O ^{[1
]}

HAFICH, MJ ^{[1
]}

KLEM, JF ^{[1
]}

LEAR, KL ^{[1
]}

CHU, SNG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 22期

关键词：

D O I：

10.1063/1.114882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 mu m with a maximum reflectivity exceeding 99%. We also measure current-voltage characteristics in a similar 10 1/2 period p-type DBR and find that a current density of 1 kA/cm(2) produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported. (C) 1995 American Institute of Physics.

引用

页码：3233 / 3235

页数：3

共 15 条

[1] IMPROVED REFLECTIVITY OF AIPSB/GAPSB BRAGG REFLECTOR FOR 1.55 MU-M WAVELENGTH [J].