Magneto-optics of the spatially separated electron and hole layers in GaAs/AlxGa1-xAs coupled quantum wells

被引：84

作者：

Butov, LV ^{[1
]}

Shashkin, AA

Dolgopolov, VT

Campman, KL

Gossard, AC

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Ctr Quantized Elect Struct, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.60.8753

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the magneto-optical study of the spatially separated electron and hole layers in GaAs/AlxGa1-xAs coupled quantum wells at low temperatures T greater than or equal to 50 mK and high magnetic fields B less than or equal to 16 T. At high magnetic fields cusps are observed in the energy and intensity of the indirect (interwell) exciton photoluminescence. We tentatively attribute these to the commensurability effects of the magnetoexciton with island structures in the sample. The indirect exciton lifetime is found to increase with magnetic field. The increase is attributed to the reduction of indirect exciton localization area caused by the increase of the magnetoexciton mass. The indirect exciton photoluminescence energy is found to enhance with density, which reflects the net repulsive interaction between indirect excitons.

引用

页码：8753 / 8758

页数：6

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