Stable organic thin-film transistor in a pixel for plastic electronics
被引:15
作者:
Han, Seung Hoon
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Han, Seung Hoon
[1
,2
]
Kim, Yong Hee
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kim, Yong Hee
[1
,2
]
Lee, Sun Hee
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Lee, Sun Hee
[1
,2
]
Choi, Min Hee
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Choi, Min Hee
[1
,2
]
Jang, Jin
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Jang, Jin
[1
,2
]
Choo, Dong Joon
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Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
Kyung Hee Univ, Dept Chem, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Choo, Dong Joon
[2
,3
]
机构:
[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
[2] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
[3] Kyung Hee Univ, Dept Chem, Seoul 130701, South Korea
We have studied the fabrication of stable organic thin-film transistor (OTFT) for plastic electronics using hybrid multi-layer (HML) of parylene/Au/photoacryl/IZO (indium zinc oxide) on organic semiconductor. The HML-passivated OTFTs exhibited the field-effect mobility (mu(fe)) of 0.2-0.3 cm(2)/V s with an on/off current ratio of 10(7) after annealing at 180 degrees C. The changes in on-, off- and subthreshold-currents of the HML-passivated OTFT were negligibly small during the storage of 781 h. Moreover, the hysteresis in transfer characteristics was negligible even after exposure of the OTFT to air for 781 h. These results indicate that HML-passivation is suitable for stable OTFT array for plastic electronics. (c) 2008 Elsevier B.V. All rights reserved.
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NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
Fujisaki, Yoshihide
;
Sato, Hiroto
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NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
Sato, Hiroto
;
Yamamoto, Toshihiro
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NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
Yamamoto, Toshihiro
;
Fujikake, Hideo
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NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
Fujikake, Hideo
;
Tokito, Shizuo
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NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
Tokito, Shizuo
;
Kurita, Taiichiro
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NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
机构:
NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
Fujisaki, Yoshihide
;
Sato, Hiroto
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机构:
NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
Sato, Hiroto
;
Yamamoto, Toshihiro
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机构:
NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
Yamamoto, Toshihiro
;
Fujikake, Hideo
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机构:
NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
Fujikake, Hideo
;
Tokito, Shizuo
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h-index: 0
机构:
NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan
Tokito, Shizuo
;
Kurita, Taiichiro
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h-index: 0
机构:
NHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Mat Sci & Adv Devices, Setagaya Ku, Tokyo 1578510, Japan