Recombination in InGaAs/GaAs quantum wire lasers

被引：2

作者：

DeVittorio, M

Rinaldi, R

Passaseo, A

DeGiorgi, M

Lomascolo, M

Visconti, P

Cingolani, R

Taurino, A

Catalano, M

DeCaro, L

Tapfer, L

机构：

[1] Univ Lecce, INFM, Mat Unita Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy

[2] Univ Lecce, Dipartimento Ingn Innovaz, Ist Mat Avanzati Elettron, Consiglio Nazl Ric, I-73110 Lecce, Italy

[3] Ctr Nazl Ricerca & Sviluppo Mat, I-72100 Brindisi, Italy

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 01期

关键词：

nanostructures; nanofabrications; scanning and transmission electron microscopy; recombination and trapping;

D O I：

10.1016/S0038-1098(99)00234-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the recombination mechanism of InGaAs/GaAs V-shaped quantum wire lasers under electrical injection and in high magnetic field, from well below to above lasing threshold. The emission originates from free-carrier recombination independent of temperature and injection density. No excitonic contribution is found, indicating that excitons are weakly bound in these wires due to the internal piezoelectric field causing a strong Stark effect. A quantitative analysis of the piezoelectric field is performed by measuring the screening induced blue-shift of the electroluminescence at different densities and comparing it with the piezoelectric potential calculated from the quantum wire cross-sections observed by transmission electron microscopy. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：55 / 60

页数：6

共 18 条

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