Recombination in InGaAs/GaAs quantum wire lasers

被引：2

作者：

DeVittorio, M

Rinaldi, R

Passaseo, A

DeGiorgi, M

Lomascolo, M

Visconti, P

Cingolani, R

Taurino, A

Catalano, M

DeCaro, L

Tapfer, L

机构：

[1] Univ Lecce, INFM, Mat Unita Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy

[2] Univ Lecce, Dipartimento Ingn Innovaz, Ist Mat Avanzati Elettron, Consiglio Nazl Ric, I-73110 Lecce, Italy

[3] Ctr Nazl Ricerca & Sviluppo Mat, I-72100 Brindisi, Italy

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 01期

关键词：

nanostructures; nanofabrications; scanning and transmission electron microscopy; recombination and trapping;

D O I：

10.1016/S0038-1098(99)00234-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the recombination mechanism of InGaAs/GaAs V-shaped quantum wire lasers under electrical injection and in high magnetic field, from well below to above lasing threshold. The emission originates from free-carrier recombination independent of temperature and injection density. No excitonic contribution is found, indicating that excitons are weakly bound in these wires due to the internal piezoelectric field causing a strong Stark effect. A quantitative analysis of the piezoelectric field is performed by measuring the screening induced blue-shift of the electroluminescence at different densities and comparing it with the piezoelectric potential calculated from the quantum wire cross-sections observed by transmission electron microscopy. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：55 / 60

页数：6

共 18 条

[11]

LOMASCOLO M, IN PRESS J PHYS C

[12] Influence of different V-grooved GaAs substrates on the geometrical shape of InGaAs/GaAs quantum wires [J].

Passaseo, A ;

Longo, M ;

Rinaldi, R ;

Cingolani, R ;

Catalano, M ;

Taurino, A ;

Vasanelli, L .

JOURNAL OF CRYSTAL GROWTH, 1999, 197 (04) :777-782

[13] Optical spectroscopy of InGaAs/GaAs V-shaped quantum wires [J].

Rinaldi, R ;

Cingolani, R ;

DeCaro, L ;

Lomascolo, M ;

Didio, R ;

Tapfer, L ;

Marti, U ;

Reinhart, FK .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1996, 13 (05) :1031-1038

[14] EXCITON BINDING-ENERGY IN GAAS V-SHAPED QUANTUM WIRES [J].

RINALDI, R ;

CINGOLANI, R ;

LEPORE, M ;

FERRARA, M ;

CATALANO, IM ;

ROSSI, F ;

ROTA, L ;

MOLINARI, E ;

LUGLI, P ;

MARTI, U ;

MARTIN, D ;

MORIERGEMOUD, F ;

RUTERANA, P ;

REINHART, FK .

PHYSICAL REVIEW LETTERS, 1994, 73 (21) :2899-2902

[15] Thermal ionization of excitons in V-shaped quantum wires [J].

Rinaldi, R ;

Giugno, PV ;

Cingolani, R ;

Rossi, F ;

Molinari, E ;

Marti, U ;

Reinhart, FK .

PHYSICAL REVIEW B, 1996, 53 (20) :13710-13714

[16] HIGH-EFFICIENCY AND LOW-THRESHOLD CURRENT STRAINED V-GROOVE QUANTUM-WIRE LASERS [J].

TIWARI, S ;

PETTIT, GD ;

MILKOVE, KR ;

LEGOUES, F ;

DAVIS, RJ ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1994, 64 (26) :3536-3538

[17] QUANTUM-CONFINED STARK SHIFT DUE TO PIEZOELECTRIC EFFECT IN INGAAS/GAAS QUANTUM-WELLS GROWN ON (111)A GAAS [J].

VACCARO, PO ;

TOMINAGA, K ;

HOSODA, M ;

FUJITA, K ;

WATANABE, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :1362-1366

[18] LASING FROM EXCITONS IN QUANTUM WIRES [J].

WEGSCHEIDER, W ;

PFEIFFER, LN ;

DIGNAM, MM ;

PINCZUK, A ;

WEST, KW ;

MCCALL, SL ;

HULL, R .

PHYSICAL REVIEW LETTERS, 1993, 71 (24) :4071-4074

← 1 2 →