Infrared absorption and Raman spectroscopy studies of InSbBi layers grown by liquid phase epitaxy

被引：31

作者：

Das, S. C. ^{[1
]}

Das, T. D. ^{[1
]}

Dhar, S. ^{[1
]}

机构：

[1] Univ Calcutta, Dept Elect Sci, Kolkata 700009, India

来源：

INFRARED PHYSICS & TECHNOLOGY | 2012年 / 55卷 / 04期

关键词：

Semiconducting III-V materials; Liquid phase epitaxy; Bismuth compounds; Energy dispersive X-ray; Raman spectroscopy measurements; GAAS1-XBIX;

D O I：

10.1016/j.infrared.2012.03.005

中图分类号：

TH7 [仪器、仪表];

学科分类号：

080401 [精密仪器及机械];

摘要：

We report on the results of optical absorption and Raman spectroscopy measurements on InSbBi layers grown by liquid phase technique. A maximum Bi content of 0.4 at.%, as measured by energy dispersive X-ray (EDX) technique, is used in the experiments. Optical absorption measurements made on the samples indicate a room temperature energy band gap reduction up to about 6 meV with respect to undoped InSb layers grown by the same technique. Bi content calculated from this band gap reduction agrees with that obtained from EDX. A weak peak obtained at 152 cm(-1) in the Raman spectrum of the material is identified with the longitudinal optical phonon mode of InBi. Further a mode at 140 cm(-1) is observed due to isolated Bi atoms at the interstitial sites. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：306 / 308

页数：3

共 15 条

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STRUCTURAL-PROPERTIES OF BISMUTH-BEARING SEMICONDUCTOR ALLOYS [J].