Low-temperature synthesis of (Pb,La)(Zr,Ti)O3 thick film on Ti substrates by the hydrothermal method using oxide precursors -: art. no. 012901

We simplified the hydrothermal process using oxides instead of liquid-base reactants as precursors. Lead lanthanum zirconate titanate Pb0.94La0.06(Zr0.65Ti0.35)(0.985)O-3 (PLZT) thick films were prepared on Ti substrates at 150 degrees C via hydrothermal synthesis. The films with a single perovskite structure were smooth and the surfaces were free of micrometer scale cracks. The thickness of the film was about 56 mu m. The dielectric constant and dielectric loss were 665 and 0.03, respectively, at 1 MHz. Even at high frequencies the dielectric properties of the PLZT film still remain stable. The samples showed excellent reproducibility in the measurement of leakage current. (c) 2006 American Institute of Physics.