Electromechanical properties of Pb(Mg1/3Nb2/3)O3-7%PbTiO3 thin films made by pulsed laser deposition

被引:14
作者
Donnelly, NJ [1 ]
Catalan, G [1 ]
Morros, C [1 ]
Bowman, RM [1 ]
Gregg, JM [1 ]
机构
[1] Queens Univ Belfast, Dept Pure & Appl Phys, Belfast BT7 1NN, Antrim, North Ireland
关键词
D O I
10.1063/1.1465116
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin film capacitors of Au/Pb(Mg1/3Nb2/3)O-3-7%PbTiO3 [PMN-(0.07)PT]/(La1/2Sr1/2)CoO3 were made by pulsed laser deposition on single crystal {001} MgO substrates. The PMN-(0.07)PT dielectric was perovskite dominated, and demonstrated functional behavior typical of relaxors. Electrostrictive behavior was observed at fields up to 200 kV cm(-1), however, the maximum strain was disappointingly low at only similar to0.14%. The macroscopic electromechanical d(33) and Q(33) coefficients were determined using piezo-response atomic force microscopy. At 100 kV cm(-1) the macroscopic Q(33) was found to be (2.6+/-0.2)x10(-2) C-2 m(4). The crystallographic electrostrictive coefficient was determined using in-situ x-ray diffraction and at the same field found to be significantly higher: (4.9+/-0.2)x10(-2) C-2 m(4). Since these electrostrictive coefficients are of the same order of magnitude as found in single crystal experiments (2.5-3.8x10(-2) C-2 m(4)), it appears that the low out-of-plane strain is simply the result of poor polarizability in the thin films. An effective Q(13) component of the electrostrictive tensor was also determined, and found to be similar to-0.32 x10(-2) C-2 m(4). (C) 2002 American Institute of Physics.
引用
收藏
页码:6200 / 6202
页数:3
相关论文
共 17 条
[1]   Influence of oxygen content on dielectric and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films [J].
Catalan, G ;
Corbett, MH ;
Bowman, RM ;
Gregg, JM .
APPLIED PHYSICS LETTERS, 1999, 74 (20) :3035-3037
[2]  
Cottrell A.H., 1964, The Mechanical Properties of Matter
[3]   In situ x-ray diffraction study of an electric field induced phase transition in the single crystal relaxor ferroelectric, 92% Pb(Zn1/3Nb2/3)O3-8% PbTiO3 [J].
Durbin, MK ;
Jacobs, EW ;
Hicks, JC ;
Park, SE .
APPLIED PHYSICS LETTERS, 1999, 74 (19) :2848-2850
[4]   Polarization rotation mechanism for ultrahigh electromechanical response in single-crystal piezoelectrics [J].
Fu, HX ;
Cohen, RE .
NATURE, 2000, 403 (6767) :281-283
[5]   The effect of applied strain on the resistance of VO2 thin films [J].
Gregg, JM ;
Bowman, RM .
APPLIED PHYSICS LETTERS, 1997, 71 (25) :3649-3651
[6]  
HELWEGE KH, 1981, LANDOLTBORNSTEIN NUM, V16
[7]   Characterization of the effective electrostriction coefficients in ferroelectric thin films [J].
Kholkin, AL ;
Akdogan, EK ;
Safari, A ;
Chauvy, PF ;
Setter, N .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (12) :8066-8073
[8]   Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films [J].
Kighelman, Z ;
Damjanovic, D ;
Seifert, A ;
Sagalowicz, L ;
Setter, N .
APPLIED PHYSICS LETTERS, 1998, 73 (16) :2281-2283
[9]   Electromechanical properties and self-polarization in relaxor Pb(Mg1/3Nb2/3)O3 thin films [J].
Kighelman, Z ;
Damjanovic, D ;
Setter, N .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1393-1401
[10]   ELECTROSTRICTIVE PROPERTIES OF PBMG1/3NB2/3O3 (PMN) BULK CERAMICS [J].
LATTARD, E ;
LEJEUNE, M ;
ABELARD, P .
JOURNAL DE PHYSIQUE III, 1994, 4 (07) :1165-1187