ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high CW power and 'wallplug' efficiency

被引：14

作者：

Syrbu, AV ^{[1
]}

Yakovlev, VP ^{[1
]}

Suruceanu, GI ^{[1
]}

Mereutza, AZ ^{[1
]}

Mawst, LJ ^{[1
]}

Bhattacharya, A ^{[1
]}

Nesnidal, M ^{[1
]}

Lopez, J ^{[1
]}

Botez, D ^{[1
]}

机构：

[1] UNIV WISCONSIN, DEPT ELECT & COMP ENGN, MADISON, WI 53706 USA

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 04期

关键词：

semiconductor junction lasers; lasers;

D O I：

10.1049/el:19960251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2.85W CW output, front-facet-emitted power and 54% maximum CW power conversion efficiency have been obtained from aluminum-free, InGaAs/InGaAsP/InGaP optimised-facet-coated, wide-stripe (100 mu m) diode lasers emitting at 950nm. Half-wave ZnSe layers, deposited on the laser facets prior to applying low/high reflectivity (LR/HR) dielectric coatings, increase the maximum CW optical power by 50%. The power conversion efficiency decreases by only 25% of its maximum value as the CW power increases from 0.75 to 2.85W.

引用

页码：352 / 354

页数：3

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