Morphology and structure of aluminum nitride thin films on glass substrates

被引:31
作者
Cheng, CC
Chen, YC
Wang, HJ
Chen, WR
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 03期
关键词
aluminum nitride; reactive RF sputtering; X-ray diffraction; scanning electron microscopy; selected-area diffraction;
D O I
10.1143/JJAP.35.1880
中图分类号
O59 [应用物理学];
学科分类号
摘要
Aluminum nitride (AlN) thin films are deposited on Coming 7059 glass at low substrate temperature by reactive RF magnetron sputtering. The structural and morphological characterizations are found to be sensitive to deposition conditions such as sputtering pressure, RF power, substrate temperature and N-2 concentration. A highly oriented AlN (002) plane parallel to the substrate surface is identified by X-ray diffraction (XRD) measurement and a dense pebble-like surface texture is observed by scanning electron microscopy (SEM). The cross-sectional SEM micrograph shows that well-aligned columnar structures with preferred orientation along the c-axis exist in the AlN thin film. However, a selected-area diffraction (SAD) pattern shows that some other planes exist in the deposited film, though only a hexagonal AlN (002) plane is obtained by XRD.
引用
收藏
页码:1880 / 1885
页数:6
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