Material and fabrication-related limitations to high-power operation of GaAs/AlGaAs and InGaAs/AlGaAs laser diodes

被引：16

作者：

Jakubowicz, A

机构：

[1] IBM Research Division, Zurich Research, Laboratory

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

epitaxial layers; laser diodes; stress field; strain field;

D O I：

10.1016/S0921-5107(96)01792-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper discusses material/device and fabrication problems related to the high-power performance of fundamental-mode GaAs/AlGaAs and InGaAs/AlGaAs laser diodes. Various views on the stability of these devices and their degradation are presented. Bulk-, mirror- and ohmic-contact-related issues, including the physics/chemistry of defect formation, are discussed. (C) 1997 Elsevier Science S.A.

引用

页码：359 / 363

页数：5

共 29 条

[1] ON THE VALIDITY OF THE AMPHOTERIC-DEFECT MODEL IN GALLIUM-ARSENIDE AND A CRITERION FOR FERMI-LEVEL PINNING BY DEFECTS [J].