Enhanced stability of MFA-MOPA semiconductor lasers using a nonlinear, trumpet-shaped flare

被引:25
作者
Skovgaard, PMW
McInerney, JG
Moloney, JV
Indik, RA
Ning, CZ
机构
[1] UNIV ARIZONA,CTR OPT SCI,TUCSON,AZ 85721
[2] UNIV ARIZONA,ARIZONA CTR MATH SCI,TUCSON,AZ 85721
关键词
distributed Bragg reflector lasers; nonlinear wave propagation; optical propagation in nonlinear media; semiconductor lasers; semiconductor optical amplifiers;
D O I
10.1109/68.618484
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Monolithically integrated flared amplifier master oscillator power amplifier (MFA-MOPA) lasers are studied using a high-resolution computational model that resolves time as well as longitudinal and transverse space dependences and includes Lorentzian gain and dispersion dynamics. By altering the linear hare of the power amplifier into a nonlinear, trumpet-shaped flare to overlap the gain region to the expanding field, the instability threshold of the MOPA is increased by similar to 2 for single-longitudinal, single-transverse mode operation and similar to 3 for single-transverse mode operation. This enables the MOPA to maintain a stable, near-diffraction limited output beam for higher currents before the onset of transverse instabilities. Thus the trumpet-flared MOPA emits an output beam of significantly higher power and brightness. This increased stability is due to a large reduction in feedback from the output facet of the trumpet shaped MFA-MOPA.
引用
收藏
页码:1220 / 1222
页数:3
相关论文
共 11 条
[1]   A NEW STRUCTURE FOR HIGH-POWER TW-SLA [J].
BENDELLI, G ;
KOMORI, K ;
ARAI, S ;
SUEMATSU, Y .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (01) :42-44
[2]  
CHOW WW, 1994, SEMICONDUCTOR LASER, DOI DOI 10.1007/978-3-642-61225-1
[3]   Time-dependent modelling of the MFA-MOPA [J].
Dente, GC ;
Tilton, ML ;
Bossert, DJ ;
Wright, MW .
LASER DIODES AND APPLICATIONS II, 1996, 2682 :48-69
[4]  
EGAN A, UNPUB DYNAMIC INSTAB
[5]   21-W BROAD AREA NEAR-DIFFRACTION-LIMITED SEMICONDUCTOR AMPLIFIER [J].
GOLDBERG, L ;
MEHUYS, D .
APPLIED PHYSICS LETTERS, 1992, 61 (06) :633-635
[6]   Full space-time simulation for high-brightness semiconductor lasers [J].
Moloney, JV ;
Indik, RA ;
Ning, CZ .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (06) :731-733
[7]  
NING CZ, IN PRESS IEEE J QUAN
[8]   2.0 W CW, DIFFRACTION-LIMITED OPERATION OF A MONOLITHICALLY INTEGRATED MASTER OSCILLATOR POWER-AMPLIFIER [J].
PARKE, R ;
WELCH, DF ;
HARDY, A ;
LANG, R ;
MEHUYS, D ;
OBRIEN, S ;
DZURKO, K ;
SCIFRES, D .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (03) :297-300
[9]   High-power, highly-reliable operation of InGaAs/InGaAsP 0.98 mu m lasers with an exponential-shaped flared stripe [J].
Sagawa, M ;
Hiramoto, K ;
Toyonaka, T ;
Kikawa, T .
ELECTRONICS LETTERS, 1996, 32 (24) :2277-2279
[10]   Semiconductor amplifiers and lasers with tapered gain regions [J].
Walpole, JN .
OPTICAL AND QUANTUM ELECTRONICS, 1996, 28 (06) :623-645