Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si

被引:32
作者
Beland, Laurent Karim [1 ]
Anahory, Yonathan [1 ]
Smeets, Dries [1 ]
Guihard, Matthieu [1 ]
Brommer, Peter [1 ]
Joly, Jean-Francois [1 ]
Pothier, Jean-Christophe [1 ]
Lewis, Laurent J. [1 ]
Mousseau, Normand [1 ]
Schiettekatte, Francois [1 ]
机构
[1] Univ Montreal, Dept Phys, Regroupement Quebecois Mat Pointe, Montreal, PQ H3C 3J7, Canada
关键词
MOLECULAR-DYNAMICS; AMORPHOUS-SILICON; GLASSES; MODEL; CALORIMETER; FABRICATION; RELAXATIONS; DEFECT;
D O I
10.1103/PhysRevLett.111.105502
中图分类号
O4 [物理学];
学科分类号
070305 [高分子化学与物理];
摘要
We study ion-damaged crystalline silicon by combining nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of disordered systems, with heat-release measurements. The microscopic mechanism associated with this logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower-energy configurations.
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页数:5
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