A strategy towards p-type doping of organic materials with HOMO levels beyond 6 eV using tungsten oxide

被引:90
作者
Meyer, Jens [1 ]
Hamwi, Sami [1 ]
Schmale, Stephan [1 ]
Winkler, Thomas [1 ]
Johannes, Hans-Hermann [1 ]
Riedl, Thomas [1 ]
Kowalsky, Wolfgang [1 ]
机构
[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst High Frequency Technol, D-38106 Braunschweig, Germany
关键词
LIGHT-EMITTING-DIODES; THIN-FILMS; DEVICES; PHTHALOCYANINE; CLUSTERS; TRIOXIDE; LAYER;
D O I
10.1039/b819485h
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The authors present a concept to p-dope organic hole transport materials with highest occupied molecular orbital ( HOMO) levels on the order of 6 eV (e. g. 4,4',4 ''-tris(N-carbazolyl)-triphenylamine (TCTA) or 4,4'-bis(carbazol-9-yl)biphenyl (CBP)) by using WO3 as acceptor. Owing to its large work function, WO3 allows for efficient electron transfer from organic semiconductors with HOMO levels in this region. The effect of p-type doping is evidenced by optical absorption spectroscopy, electrical transport characteristics and Kelvin probe analysis. Moreover, OLED devices have been realized which exhibit 30% enhanced power efficiency due to the p-type doping. The results are expected to have a significant impact on the development of organic (opto-) electronic devices.
引用
收藏
页码:702 / 705
页数:4
相关论文
共 21 条
[21]   Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with a MoOx p-doping layer [J].
Xie, Guohua ;
Meng, Yanlong ;
Wu, Fengmin ;
Tao, Chen ;
Zhang, Dandan ;
Liu, Mingjun ;
Xue, Qin ;
Chen, Wen ;
Zhao, Yi .
APPLIED PHYSICS LETTERS, 2008, 92 (09)