Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with a MoOx p-doping layer

被引：80

作者：

Xie, Guohua ^{[1
]}

Meng, Yanlong ^{[1
]}

Wu, Fengmin ^{[1
]}

Tao, Chen ^{[1
]}

Zhang, Dandan ^{[1
]}

Liu, Mingjun ^{[1
]}

Xue, Qin ^{[1
]}

Chen, Wen ^{[1
]}

Zhao, Yi ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2890490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated an organic light-emitting diode based on molybdenum oxide (MoOx) doped 4,4('),4('')-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) as a p-type doping hole injection layer. The tris-(8-hydroxyquinoline) aluminum (Alq(3))-based organic light-emitting diodes show high brightness at very low operating voltage, 100 cd/m(2) at 3.2 V and 1000 cd/m(2) at 4.4 V, corresponding to a low turn-on voltage of 2.4 V. Such improved properties are attributed to the formation of the charge transfer complex produced by doping MoOx into m-MTDATA, which provides much more free hole carriers, and the introduction of an efficient electron-injecting layer to improve the performance. (c) 2008 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 22 条

[1] MoOx modified Ag anode for top-emitting organic light-emitting devices [J].

Cao, Jin ;

Jiang, XueYin ;

Zhang, ZhiLin .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

[2] Highly power efficient organic light-emitting diodes with a p-doping layer [J].

Chang, Chan-Ching ;

Hsieh, Ming-Ta ;

Chen, Jenn-Fang ;

Hwang, Shiao-Wen ;

Chen, Chin H. .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

[3]

Gao W., 2004, APPL PHYS LETT, V79, P4040

[4] Low-voltage organic electroluminescence device with an ultrathin, hybrid structure [J].

Heithecker, D ;

Kammoun, A ;

Dobbertin, T ;

Riedl, T ;

Becker, E ;

Metzdorf, D ;

Schneider, D ;

Johannes, HH ;

Kowalsky, W .

APPLIED PHYSICS LETTERS, 2003, 82 (23) :4178-4180

[5] Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide by admittance spectroscopy [J].

Hsieh, Ming-Ta ;

Chang, Chan-Ching ;

Chen, Jenn-Fang ;

Chen, Chin H. .

APPLIED PHYSICS LETTERS, 2006, 89 (10)

[6] Low-voltage organic electroluminescent devices using pin structures [J].

Huang, JS ;

Pfeiffer, M ;

Werner, A ;

Blochwitz, J ;

Leo, K ;

Liu, SY .

APPLIED PHYSICS LETTERS, 2002, 80 (01) :139-141

[7] White stacked electrophosphorescent organic light-emitting devices employing MoO3 as a charge-generation layer [J].

Kanno, H ;

Holmes, RJ ;

Sun, Y ;

Kena-Cohen, S ;

Forrest, SR .

ADVANCED MATERIALS, 2006, 18 (03) :339-+

[8] Stacked white organic light-emitting devices based on a combination of fluorescent and phosphorescent emitters [J].

Kanno, Hiroshi ;

Giebink, Noel C. ;

Sun, Yiru ;

Forrest, Stephen R. .

APPLIED PHYSICS LETTERS, 2006, 89 (02)

[9] Low driving voltage and high stability organic light-emitting diodes with rhenium oxide-doped hole transporting layer [J].

Leem, Dong-Seok ;

Park, Hyung-Dol ;

Kang, Jae-Wook ;

Lee, Jae-Hyun ;

Kim, Ji Whan ;

Kim, Jang-Joo .

APPLIED PHYSICS LETTERS, 2007, 91 (01)

[10] Heterogeneously integrated organic light-emitting diodes with complementary metal-oxide-silicon circuitry [J].

Mathine, DL ;

Woo, HS ;

He, W ;

Kim, TW ;

Kippelen, B ;

Peyghambarian, N .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3849-3851