Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with a MoOx p-doping layer

被引：80

作者：

Xie, Guohua ^{[1
]}

Meng, Yanlong ^{[1
]}

Wu, Fengmin ^{[1
]}

Tao, Chen ^{[1
]}

Zhang, Dandan ^{[1
]}

Liu, Mingjun ^{[1
]}

Xue, Qin ^{[1
]}

Chen, Wen ^{[1
]}

Zhao, Yi ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2890490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated an organic light-emitting diode based on molybdenum oxide (MoOx) doped 4,4('),4('')-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) as a p-type doping hole injection layer. The tris-(8-hydroxyquinoline) aluminum (Alq(3))-based organic light-emitting diodes show high brightness at very low operating voltage, 100 cd/m(2) at 3.2 V and 1000 cd/m(2) at 4.4 V, corresponding to a low turn-on voltage of 2.4 V. Such improved properties are attributed to the formation of the charge transfer complex produced by doping MoOx into m-MTDATA, which provides much more free hole carriers, and the introduction of an efficient electron-injecting layer to improve the performance. (c) 2008 American Institute of Physics.

引用

页数：3