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Vanadium pentoxide modified polycrystalline silicon anode for active-matrix organic light-emitting diodes

被引：68
作者：
Zhu, XL
Sun, JX
Peng, HJ
Meng, ZG
Wong, M
Kwok, HS
机构：
[1] Hong Kong Univ Sci & Technol, Ctr Display Res, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 15期
关键词：
D O I：
10.1063/1.2099520
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Recently, polycrystalline silicon (p-Si) has been demonstrated to be an efficient anode for organic light-emitting diode (OLED) [X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong, and H. S. Kwok, Appl. Phys. Lett. 87, 083504 (2005)]. In this letter, we show that, by depositing an ultrathin vanadium pentoxide (V2O5) layer on the p-Si anode, the performance of the OLED can be greatly improved. Detailed x-ray photoelectron spectroscopy study shows that strong band bending occurs at the p-Si/V2O5 interface, leading to much stronger hole injection. This modified p-Si anode can be integrated with the active p-Si layer of thin-film transistors in active-matrix OLED displays. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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