Highly power efficient organic light-emitting diodes with a p-doping layer

被引：121

作者：

Chang, Chan-Ching

Hsieh, Ming-Ta ^{[1
]}

Chen, Jenn-Fang

Hwang, Shiao-Wen

Chen, Chin H.

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, MIRC, Display Inst, Hsinchu 30050, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

关键词：

ELECTROLUMINESCENT DEVICES; PHTHALOCYANINE;

D O I：

10.1063/1.2405856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4('),4(')-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (2-TNATA) to replace the volatile tetrafluro-tetracyanoquinodimethane. The authors propose the 2-TNATA:WO3 composition functions as a p-doping layer which significantly improves hole injection and conductivity of the device that leads to the fabrication of tris(8-quinolinolato)aluminum based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lm/W) at 100 cd/m(2). (c) 2006 American Institute of Physics.

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页数：3

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