Development of sub-quarter-mu m MONOS (metal oxide nitride oxide semiconductor) type memory transistor

被引：4

作者：

Bohm, T

Nakamura, A

Aozasa, H

Yamagishi, M

Komatsu, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

MONOS; nonvolatile memory; ONO; RTN; sub-quarter-mu m;

D O I：

10.1143/JJAP.35.898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A MONOS (metal/oxide/nitride/oxide/semiconductor) type nonvolatile memory transistor with a gate length of 0.23 mu m has been developed. This memory transistor offers high endurance, low programming voltage and a narrow distribution of programmed threshold voltages. By introducing a rapid thermal nitridation (RTN) step into the fabrication prosecc of the ONO (oxide/nitride/oxide) layer, an enhancement in erase speed of one order of magnitude is achieved. The RTN also improves the oxidation resistance of the nitride layer, so that scaling down the thickness of the ONO film in order to reduce the programming voltage is feasible.

引用

页码：898 / 901

页数：4

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