SCALING DOWN MNOS NON-VOLATILE MEMORY DEVICES

被引：17

作者：

YATSUDA, Y ^{[1
]}

HAGIWARA, T ^{[1
]}

MINAMI, SI ^{[1
]}

KONDO, R ^{[1
]}

UCHIDA, K ^{[1
]}

UCHIUMI, K ^{[1
]}

机构：

[1] HITACHI LTD,MASUSHI WORKS,KODAIRA,TOKYO 187,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.7567/JJAPS.21S1.85

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：85 / 90

页数：6

共 12 条

[1] REVIEW OF RECENT EXPERIMENTS PERTAINING TO HOLE TRANSPORT IN SI3N4 [J].

ARNETT, PC ;

WEINBERG, ZA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :1014-1018

[2] THEORY OF MNOS MEMORY TRANSISTOR [J].

CHANG, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) :511-518

[3] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[4]

HAGIWARA T, 1979, ISSCC DIGEST, P50

[5]

HAGIWARA Y, 1981, ISSCC DIG TECH P FEB, P222

[6]

HAMPTON FL, 1979, IEEE INT ELECTRON DE, P374

[7]

JOHNSON WS, 1980, ISSCC, P152

[8] DISCHARGE OF MNOS STRUCTURES [J].

LUNDKVIST, L ;

LUNDSTROM, I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :811-+

[9]

ROSS EC, 1969, RCA REV, V30, P366

[10]

SHELTON EK, 1980, ELECTRONICS, V31, P89

← 1 2 →