EFFECTS OF DEPOSITION TEMPERATURE ON THE OXIDATION RESISTANCE AND ELECTRICAL CHARACTERISTICS OF SILICON-NITRIDE

被引：7

作者：

YOSHIMARU, M

INOUE, N

TAMURA, H

INO, M

机构：

[1] VLSI Research and Development Center, Oki Electric Industry Co., Ltd., Hachioji, Tokyo 193, 550–1, Higashi-asakawa

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 10期

关键词：

D O I：

10.1109/16.324583

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study was made of the effects of deposition temperature on the oxidation resistance and electrical characteristics of silicon nitride. It was found that silicon nitride below a certain limit thickness has no oxidation resistance. This threshold falls as the deposition temperature is lowered. 3-nm-thick silicon nitride deposited at 600-degrees-C has sufficient oxidation resistance for wet oxidation at 850-degrees-C, while 5 nm film deposited at 750-degrees-C has no oxidation resistance. The electrical characteristics also improve as the deposition temperature is lowered. 6-nm-thick silicon nitride deposited at 600-degrees-C shows a TDDB lifetime that is about two orders longer than that of 6-nm-thick silicon nitride deposited at 700-degrees-C. It was also found that the silicon nitride transition layer which is deposited at the initial stage of deposition influences the oxidation resistance and electrical characteristics of thin silicon nitride. It was concluded that lowering the deposition temperature reduces the influence of the transition layer and improves the oxidation resistance and electrical characteristics of thin silicon nitride.

引用

页码：1747 / 1752

页数：6

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