CARRIER CONDUCTION IN THIN SILICON-NITRIDE FILMS

被引：9

作者：

SUZUKI, E

HIRAISHI, H

ISHII, K

HAYASHI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.93233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：681 / 683

页数：3

共 17 条

[1] HIGH-FIELD DARK CURRENTS IN THIN CVD SILICON-NITRIDE [J].

ANDREWS, JM ;

JACKSON, BG ;

POLITO, WJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :495-502

[2] HIGH-FIELD DARK CURRENTS IN THIN CVD SILICON-NITRIDE WITH GRADED INTERFACIAL COMPOSITION [J].

ANDREWS, JM ;

JACKSON, BG ;

POLITO, WJ .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :785-787

[3] HOLE INJECTION INTO SILICON-NITRIDE - DARK CURRENT DEPENDENCE ON ELECTRODE MATERIALS AND INSULATOR THICKNESS [J].

ARNETT, PC ;

DIMARIA, DJ .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :34-36

[4] REVIEW OF RECENT EXPERIMENTS PERTAINING TO HOLE TRANSPORT IN SI3N4 [J].

ARNETT, PC ;

WEINBERG, ZA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :1014-1018

[5] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J].

ARNETT, PC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5236-5243

[6] THEORY OF MNOS MEMORY TRANSISTOR [J].

CHANG, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) :511-518

[7] CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS [J].

DIMARIA, DJ ;

ARNETT, PC .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) :227-244

[8] Electron emission in intense electric fields [J].

Fowler, RH ;

Nordheim, L .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) :173-181

[9]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[10] 2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J].

GINOVKER, AS ;

GRITSENKO, VA ;

SINITSA, SP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :489-495

← 1 2 →