Dimensional constraints on high aspect ratio silicon microstructures fabricated by HF photoelectrochemical etching

被引:42
作者
Barillaro, G [1 ]
Nannini, A [1 ]
Pieri, F [1 ]
机构
[1] Univ Pisa, Dipartimento Ingn Informaz Elettron Informat Tele, I-56126 Pisa, Italy
关键词
D O I
10.1149/1.1449953
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The fabrication of macropores in crystalline silicon by photoelectrochemical etching in a hydrofluoric acid electrolyte is investigated. It is shown that the dimensional constraints on the pore diameters, which, in previous literature, are considered to depend on substrate doping, can be significantly relaxed. We show that it is possible to fabricate arrays of square section macropores with sides ranging from 2 to 15 mum using the same n-doped (2.4- 4 Omega cm) silicon substrate. Moreover, we demonstrate that macropore arrays with pitch variation up to 100% (8 and 16 mum) can be simultaneously grown on the same silicon sample. The same process is used to fabricate arrays of silicon walls with different spacing and pitch as well. A simple model, based on the coalescence in a single pore of multiple stable pores, is proposed to explain the experimental data. (C) 2002 The Electrochemical Society.
引用
收藏
页码:C180 / C185
页数:6
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