CIS and CIGS based photovoltaic structures developed from electrodeposited precursors

被引：44

作者：

Sebastian, PJ

Calixto, ME

Bhattacharya, RN

Noufi, R

机构：

[1] Univ Nacl Autonoma Mexico, CIE, Photovoltaic Syst Grp, Solar Energy Lab, Temixco 62580, Morelos, Mexico

[2] NREL, Golden, CO USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 59卷 / 1-2期

关键词：

CIS; CIGS; thin films; electrodeposition;

D O I：

10.1016/S0927-0248(99)00037-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In the present study we report the electrodeposition and characterization of CIS and CIGS thin films and a post-deposition thermal processing in vacuum to improve the film stoichiometry by incorporating additional In, Ga and Se. Different kinds of analyses showed that CIS as well as CIGS possess a very thin In-rich surface n-layer. The formation and characterization of solar cell structures from the electrodeposited precursor with the configuratio n glass/Cr/Mo/CIS(CIGS)/CdS/ZnO/MgF2 is also reported. The optoelectronic properties such as Voc, Isc, FF, eta etc, of the cells are presented. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：125 / 135

页数：11