Growth and characterization of Ba0.6Sr0.4TiO3 thin films on Si with Pt electrodes

被引：8

作者：

Kinder, L

Zhang, XF

Grigorov, IL

Kwon, C

Jia, QX

Luo, L

Zhao, J

机构：

[1] Los Alamos Natl Lab, Superconduct Technol Ctr, Los Alamos, NM 87545 USA

[2] Appl Mat Inc, PDD Prod Business Grp, High K Strateg Prod Unit, Santa Clara, CA 95054 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.582098

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Both metalorganic chemical vapor deposition and pulsed laser deposition have been used to grow Ba0.6Sr0.4TiO3 (BST) thin films on Si with Pt electrodes. The smoother Pt electrodes allow the BST to:grow with greater crystallinity. Thin Nm Pt/BST/Pt capacitors with a dielectric thickness Of around 170 nm show dielectric constants over 400 and dielectric losses in the range of 0.01-0.03 at 10 kHz. The electric/dielectric properties of the BST films are further improved by first depositing a 27 nm BST seed layer by metalorganic chemical vapor deposition followed by a 145 nm BST layer deposited by pulsed laser deposition. (C) 1999 American Vacuum Society. [S0734-2101(99)03404-1].

引用

页码：2148 / 2150

页数：3

共 7 条

[1] Compensation doping of Ba0.7Sr0.3TiO3 thin films [J].