Large-scale Si1-xGex quantum dot arrays fabricated by templated catalytic etching

被引：37

作者：

Huang, ZP

Wu, Y

Fang, H

Deng, N

Ren, TL

Zhu, J ^{[1
]}

机构：

[1] Tsinghua Univ, Electron Microscope Lab, Sch Mat Sci & Engn, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 05期

关键词：

D O I：

10.1088/0957-4484/17/5/052

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Templated catalytic etching has been developed as an effective method for preparing highly ordered, wafer scale Si1-xGex quantum dot arrays on an Si substrate. Process parameters including etching time, etching temperature, and the diameter and dosage of polystyrene spheres can be independently adjusted to control the dot size, inter-dot space, and dot arrangement mode. Photoluminescence characterization indicates a remarkable enhancement of the luminescence intensity, showing potential for future optoelectronic applications.

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页码：1476 / 1480

页数：5

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