Thin-film multimaterial optoelectronic integrated circuits

被引:15
作者
Jokerst, NM
Brooke, MA
Vendier, O
Wilkinson, S
Fike, S
Lee, M
Twyford, E
Cross, J
Buchanan, B
Wills, S
机构
[1] School of Electrical and Computer Engineering, Microelectronics Research Center, Georgia Institute of Technology, Atlanta
来源
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING | 1996年 / 19卷 / 01期
关键词
optoelectronics; interconnect network; thin film devices; epitaxial liftoff;
D O I
10.1109/96.486491
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The multimaterial integration of thin-film optoelectronic devices with host substrates ranging from silicon circuits to glass waveguides to polymer micromachines offers to the system designer the freedom to choose the optimal materials for each component to achieve performance and cost objectives. Thin-film compound semiconductor optoelectronic devices are comparable to, and, in some cases, better than, their on-wafer counterparts. Thin-film detectors have been integrated with receiver circuits and movable micromachines, thin-film emitters with drive circuitry, and both have been used to demonstrate three-dimensionally interconnected systems. Vertical electrical integration of detector arrays on top of circuits is examined for massively parallel processing of images. Vertical optical interconnections of stacked silicon circuits (which are transparent to the wavelength of light used) are explored, and are used to develop a massively parallel processing architecture based upon low memory, high throughput, and high input/output.
引用
收藏
页码:97 / 106
页数:10
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