Effect of electronic structure on carrier multiplication efficiency: Comparative study of PbSe and CdSe nanocrystals

被引:226
作者
Schaller, RD [1 ]
Petruska, MA [1 ]
Klimov, VI [1 ]
机构
[1] Los Alamos Natl Lab, Div Chem, Los Alamos, NM 87545 USA
关键词
D O I
10.1063/1.2142092
中图分类号
O59 [应用物理学];
学科分类号
摘要
Recently, we demonstrated that PbSe nanocrystal quantum dots can efficiently produce multiple electron-hole pairs (excitons) in response to a single absorbed photon. To address the generality of this carrier-multiplication phenomenon to other materials, we perform a comparative study of multiexciton generation in PbSe and CdSe nanocrystals that have distinctly different electronic structures. We find that both materials exhibit high-efficiency carrier multiplication and the activation threshold is lower in CdSe nanocrystals than in PbSe nanocrystals (similar to 2.5 vs similar to 2.9 energy gaps). Furthermore, the efficiencies of multiexciton generation are nearly identical for both materials despite a vast difference in both energy structures and carrier relaxation behaviors, strongly suggesting that this phenomenon is general to quantum-confined semiconductor nanocrystals. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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