C60 cluster formation at interfaces with pentacene thin-film phases

被引：21

作者：

Conrad, B. R. ^{[1
,2
]}

Tosado, J. ^{[1
,2
]}

Dutton, G. ^{[3
]}

Dougherty, D. B. ^{[3
]}

Jin, W. ^{[2
,4
]}

Bonnen, T. ^{[3
]}

Schuldenfrei, A. ^{[3
]}

Cullen, W. G. ^{[1
,2
]}

Williams, E. D. ^{[1
,2
]}

Reutt-Robey, J. E. ^{[2
,4
]}

Robey, S. W. ^{[3
]}

机构：

[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

[2] Univ Maryland, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA

[3] NIST, Gaithersburg, MD 20899 USA

[4] Univ Maryland, Dept Chem & Biochem, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 21期

关键词：

atomic clusters; atomic force microscopy; organic semiconductors; photoemission; scanning tunnelling microscopy; SOLAR-CELLS; BAND-GAP; SURFACES; GROWTH; OXIDATION; METAL;

D O I：

10.1063/1.3266857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The C-60-thin film pentacene interface was investigated using scanning tunneling microscopy, atomic force microscopy, and ultraviolet photoemission spectroscopy. C-60 deposition on a multilayer pentacene film (standing) yields an interface dominated by C-60 clusters, regardless of the underlying substrate. Three-dimensional cluster growth dominates due to weak interactions with the underlying Pn. C-60 cluster size and density on sequential Pn layers suggest an Ehrlich-Schwoebel-type barrier at Pn layer boundaries. Cluster formation reduces the C-60 lowest unoccupied molecular orbital-Pn highest occupied molecular orbital (HOMO) separation, while increasing the respective HOMO-HOMO offset. Heterostructure fabrication protocols can alter interface morphology and induce band shifts on the order of 0.3 eV.

引用

页数：3

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