Percolative effects on noise in pentacene transistors

被引：39

作者：

Conrad, B. R. ^{[1
]}

Cullen, W. G. ^{[1
]}

Yan, W. ^{[1
]}

Williams, E. D. ^{[1
]}

机构：

[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 24期

关键词：

D O I：

10.1063/1.2823577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies inversely with gate voltage, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure. (c) 2007 American Institute of Physics.

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共 30 条

[1] The 1/f noise of InP based 2DEG devices and its dependence on mobility [J].

Berntgen, J ;

Heime, K ;

Daumann, W ;

Auer, U ;

Tegude, FJ ;

Matulionis, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (01) :194-203

[2] Low-frequency noise in polymer transistors [J].

Deen, MJ ;

Marinov, O ;

Yu, JF ;

Holdcroft, S ;

Woods, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) :1688-1695

[3] Organic thin-film transistors: A review of recent advances [J].

Dimitrakopoulos, CD ;

Mascaro, DJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2001, 45 (01) :11-27

[4] Current noise spectroscopy on mLPPP based organic light emitting diodes [J].

Ferrari, G ;

Natali, D ;

Sampietro, M ;

Wenzl, FP ;

Scherf, U ;

Schmitt, C ;

Güntner, R ;

Leising, G .

ORGANIC ELECTRONICS, 2002, 3 (01) :33-42

[5] Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance [J].

Guo, Dong ;

Miyadera, Tetsuhiko ;

Ikeda, Susumu ;

Shimada, Toshihiro ;

Saiki, Koichiro .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (02)

[6] Growth dynamics of pentacene thin films [J].

Heringdorf, FJMZ ;

Reuter, MC ;

Tromp, RM .

NATURE, 2001, 412 (6846) :517-520

[7] 1/F NOISE SOURCES [J].

HOOGE, FN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1926-1935

[8] 1/F NOISE IS NO SURFACE EFFECT [J].

HOOGE, FN .

PHYSICS LETTERS A, 1969, A 29 (03) :139-&

[9] Organic thin film transistors: From theory to real devices [J].

Horowitz, G .

JOURNAL OF MATERIALS RESEARCH, 2004, 19 (07) :1946-1962

[10] Hooge's constant for carbon nanotube field effect transistors [J].

Ishigami, Masa ;

Chen, J. H. ;

Williams, E. D. ;

Tobias, David ;

Chen, Y. F. ;

Fuhrer, M. S. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)