Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates

被引：92

作者：

Ihn, Soo-Ghang

Song, Jong-In

Kim, Tae-Wook

Leem, Dong-Seok

Lee, Takhee

Lee, Sang-Geul

Koh, Eui Kwan

Song, Kyung

机构：

[1] Gwangju Inst Sci & Technol, Ctr Distributed Sensor Networks, Kwangju 500712, South Korea

[2] GIST, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] KBSI, Gwangju Ctr, Seoul, South Korea

来源：

NANO LETTERS | 2007年 / 7卷 / 01期

关键词：

D O I：

10.1021/nl0618795

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

GaAs nanowires were epitaxially grown on Si(001) and Si(111) substrates by using Au-catalyzed vapor-liquid-solid (VLS) growth in a solid source molecular beam epitaxy system. Scanning electron microscopy analysis revealed that almost all the GaAs nanowires were grown along < 111 > directions on both Si substrates for growth conditions investigated. The GaAs nanowires had a very uniform diameter along the growth direction. X-ray diffraction data and transmission electron microscopy analysis revealed that the GaAs < 111 > nanowires had a mixed crystal structure of the hexagonal wurtzite and the cubic zinc-blende. Current-voltage characteristics of junctions formed by the epitaxially grown GaAs nanowires and the Si substrate were investigated by using a current-sensing atomic force microscopy.

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页码：39 / 44

页数：6

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