New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

被引：42

作者：

Huby, N. ^{[1
]}

Tallarida, G. ^{[1
]}

Kutrzeba, M. ^{[1
]}

Ferrari, S. ^{[1
]}

Guziewicz, E. ^{[2
]}

Wachnicki, L. ^{[2
]}

Godlewski, M. ^{[2
]}

机构：

[1] INFM, CNR, Lab MDM, I-20041 Agrate Brianza Mi, Italy

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 12期

关键词：

Schottky diode; Atomic layer deposition; ZnO;

D O I：

10.1016/j.mee.2008.07.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication of Schottky diodes based on n-type zinc oxide (ZnO) grown by atomic layer deposition (ALD) at low temperature (100 degrees C). These structures are suitable as selector elements in highly integrated non volatile memories based on crossbar architecture. The junctions are fully realized by optical lithography and the smallest investigated structures are 3 x 3 mu m(2) area. Several metals have been tested to single out the most suitable ohmic and Schottky contact materials. The electrical characterisation shows good Properties with a forward current above 10(4) A/cm(2) and a rectifying ratio of 10(5). (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2442 / 2444

页数：3

共 21 条

[1] Metal Schottky diodes on Zn-polar and O-polar bulk ZnO [J].