Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition

被引：114

作者：

Huby, N. ^{[1
]}

Ferrari, S.

Guziewicz, E. ^{[2
]}

Godlewski, M. ^{[2
]}

Osinniy, V. ^{[2
]}

机构：

[1] INFM, MDM, I-20041 Agrate Brianza, Italy

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

关键词：

D O I：

10.1063/1.2830940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the electrical properties of thin film transistors based on zinc oxide (ZnO) layers grown by low temperature (100-170 degrees C) atomic layer deposition. As evidenced through Hall effect measurements, a drastic decrease of the carrier concentration occurred for ZnO films grown at 100 degrees C. Time of flight-secondary ions mass spectroscopy analysis revealed that this decrease is associated with an increase of the hydroxide groups in the ZnO layer which suppressed oxygen vacancy formation. Transistors fabricated from ZnO films grown at 100 degrees C exhibit a high I-on/I-off ratio (similar to 10(7)) and an encouraging intrinsic channel mobility (similar to 1 cm(2)/V s). (c) 2008 American Institute of Physics.

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共 17 条

[1] Contact resistance in organic thin film transistors [J].

Blanchet, GB ;

Fincher, CR ;

Lefenfeld, M ;

Rogers, JA .

APPLIED PHYSICS LETTERS, 2004, 84 (02) :296-298

[2] High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[3] Diffusion reaction of oxygen in HfO2/SiO2/Si stacks [J].

Ferrari, S. ;

Fanciulli, M. .

JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (30) :14905-14910

[4] Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Martins, RFP ;

Pereira, LMN .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2541-2543

[5] Scaling behavior of ZnO transparent thin-film transistors [J].

Hsieh, Hsing-Hung ;

Wu, Chung-Chih .

APPLIED PHYSICS LETTERS, 2006, 89 (04)

[6] Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant [J].

Kim, SK ;

Hwang, CS ;

Park, SHK ;

Yun, SJ .

THIN SOLID FILMS, 2005, 478 (1-2) :103-108

[7] Extra-low temperature growth of ZnO by atomic layer deposition with diethylzinc precursor [J].

Kowalik, I. A. ;

Guziewicz, E. ;

Kopalko, K. ;

Yatsunenko, S. ;

Godlewski, M. ;

Wojcik, A. ;

Osinniy, V. ;

Krajewski, T. ;

Story, T. ;

Lusakowska, E. ;

Paszkowicz, W. .

ACTA PHYSICA POLONICA A, 2007, 112 (02) :401-406

[8] ZnO field-effect transistors prepared by aqueous solution-growth ZnO crystal thin film [J].

Li, Chensha ;

Li, Yuning ;

Wu, Yiliang ;

Ong, Beng S. ;

Loutfy, Rafik O. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)

[9] AN EXPERIMENTAL-STUDY OF THE SOURCE DRAIN PARASITIC RESISTANCE EFFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

LUAN, SW ;

NEUDECK, GW .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :766-772

[10] Modeling of organic thin film transistors: Effect of contact resistances [J].

Natali, Dario ;

Fumagalli, Luca ;

Sampietro, Marco .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)