ZnO field-effect transistors prepared by aqueous solution-growth ZnO crystal thin film

被引：42

作者：

Li, Chensha

Li, Yuning

Wu, Yiliang

Ong, Beng S.

Loutfy, Rafik O.

机构：

[1] McMaster Univ, Dept Chem Engn, Hamilton, ON L8S 4L7, Canada

[2] Xerox Res Ctr Canada Ltd, Mat Design & Integrat Lab, Mississauga, ON L5K 2L1, Canada

[3] McMaster Univ, Dept Chem Engn, Hamilton, ON L8S 4L7, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 07期

关键词：

D O I：

10.1063/1.2773683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A ZnO thin-film transistor (TFT) with a channel layer formed via aqueous solution-growth at low temperature is demonstrated. This ZnO thin-film semiconductor has a well-controlled crystalline form, exhibiting n-channel, enhancement-mode behavior with a channel mobility as large as 0.56 cm(2) V-1 s(-1). Low-cost, superior transistor characteristics and low-temperature processing makes ZnO TFT attractive for flexible electronics on temperature sensitive substrates. (C) 2007 American Institute of Physics.

引用

页数：3

共 15 条

[1] Efficient hybrid solar cells from zinc oxide nanoparticles and a conjugated polymer [J].