Heteroepitaxial growth of 3C-SiC on Si(0 0 1) without carbonization

被引：28

作者：

Lee, KW ^{[1
]}

Yu, KS ^{[1
]}

Kim, Y ^{[1
]}

机构：

[1] KOREA RES INST CHEM TECHNOL,INORGAN MAT DIV,THIN FILM MAT LAB,TAEJON 305600,SOUTH KOREA

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 179卷 / 1-2期

关键词：

chemical vapor deposition; 1,3-disilabutane; heteroepitaxy; silicon carbide; single precursor;

D O I：

10.1016/S0022-0248(97)00094-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial cubic SiC films were grown on Si(0 0 1) substrates without carbonization at temperatures of 900-1000 degrees C by high-vacuum chemical vapor deposition using 1,3-disilabutane (H3SiCH2SiH2CH3). The films were characterized by in situ RHEED, TEM, XRD, SEM, RBS, AES and ERD analyses. The electron and X-ray diffraction results showed that the crystalline structure of the deposited films depends on the heating rate of the substrate from similar to 100 degrees C to the growth temperature. The films grown only with a temperature ramp slower than 1.5 degrees C/s were found to be single-crystalline over this temperature range. RBS, AES and ERD analyses showed that our films are stoichiometric and homogeneous in depth and have low levels of impurities, especially hydrogen.

引用

页码：153 / 160

页数：8

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