Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

被引：384

作者：

Bajoni, Daniele ^{[1
]}

Senellart, Pascale ^{[1
]}

Wertz, Esther ^{[1
]}

Sagnes, Isabelle ^{[1
]}

Miard, Audrey ^{[1
]}

Lemaitre, Aristide ^{[1
]}

Bloch, Jacqueline ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.100.047401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10(4). Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.

引用

页数：4

共 36 条

[1] OBSERVATION OF BOSE-EINSTEIN CONDENSATION IN A DILUTE ATOMIC VAPOR [J].

ANDERSON, MH ;

ENSHER, JR ;

MATTHEWS, MR ;

WIEMAN, CE ;

CORNELL, EA .

SCIENCE, 1995, 269 (5221) :198-201

[2] Nonresonant electrical injection of excitons in an InGaAs quantum well [J].

Bajoni, D. ;

Miard, A. ;

Lemaitre, A. ;

Bouchoule, S. ;

Bloch, J. ;

Tignon, J. .

APPLIED PHYSICS LETTERS, 2007, 90 (12)

[3] Photon lasing in GaAs microcavity:: Similarities with a polariton condensate [J].

Bajoni, Daniele ;

Senellart, Pascale ;

Lemaitre, Aristide ;

Bloch, Jacqueline .

PHYSICAL REVIEW B, 2007, 76 (20)

[4] Bose-einstein condensation of microcavity polaritons in a trap [J].

Balili, R. ;

Hartwell, V. ;

Snoke, D. ;

Pfeiffer, L. ;

West, K. .

SCIENCE, 2007, 316 (5827) :1007-1010

[5] Giant Rabi splitting in a microcavity containing distributed quantum wells [J].

Bloch, J ;

Freixanet, T ;

Marzin, JY ;

Thierry-Mieg, V ;

Planel, R .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1694-1696

[6] Strong-coupling regime in pillar semiconductor microcavities [J].

Bloch, J ;

Planel, R ;

Thierry-Mieg, V ;

Gerard, JM ;

Barrier, D ;

Marzin, JY ;

Costard, E .

SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (03) :371-374

[7] Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities -: art. no. 205310 [J].

Butté, R ;

Delalleau, G ;

Tartakovskii, AI ;

Skolnick, MS ;

Astratov, VN ;

Baumberg, JJ ;

Malpuech, G ;

Di Carlo, A ;

Kavokin, AV ;

Roberts, JS .

PHYSICAL REVIEW B, 2002, 65 (20) :2053101-2053109

[8] Transition from a microcavity exciton polariton to a photon laser [J].

Cao, H ;

Pau, S ;

Jacobson, JM ;

Bjork, G ;

Yamamoto, Y ;

Imamoglu, A .

PHYSICAL REVIEW A, 1997, 55 (06) :4632-4635

[9] Excitonic photoluminescence in semiconductor quantum wells: Plasma versus excitons [J].

Chatterjee, S ;

Ell, C ;

Mosor, S ;

Khitrova, G ;

Gibbs, HM ;

Hoyer, W ;

Kira, M ;

Koch, SW ;

Prineas, JP ;

Stolz, H .

PHYSICAL REVIEW LETTERS, 2004, 92 (06)

[10] Room-temperature polariton lasing in semiconductor microcavities [J].

Christopoulos, S. ;

von Hogersthal, G. Baldassarri Hoger ;

Grundy, A. J. D. ;

Lagoudakis, P. G. ;

Kavokin, A. V. ;

Baumberg, J. J. ;

Christmann, G. ;

Butte, R. ;

Feltin, E. ;

Carlin, J. -F. ;

Grandjean, N. .

PHYSICAL REVIEW LETTERS, 2007, 98 (12)

← 1 2 3 4 →