Work function tuning of nickel silicide by co-sputtering nickel and silicon

被引：27

作者：

Biswas, N ^{[1
]}

Gurganus, J ^{[1
]}

Misra, V ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 17期

关键词：

D O I：

10.1063/1.2115072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Co-sputtered nickel silicide films were evaluated on thin layers of SiO2 gate dielectrics. Work function values ranging from 4.86 eV for Ni rich films to 4.3 eV were observed at 400 degrees C and were found to be a strong function of the Ni and Si ratio in the films. Phase analysis indicated the presence of different phases of NixSiy for varying concentrations of Ni and Si. High-temperature characteristics, leakage, and change in equivalent oxide thickness values were also evaluated for selected conditions. Rutherford backscattering, x-ray diffraction, Auger electron spectroscopy and high-resolution transmission electron microscopy were used for material analyses. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 11 条

[1]

CABRAL C, 2003, P EL SOC, V13, P375

[2]

GUSEV EP, 2004, INT EL DEV M

[3]

Hauser JR, 1998, AIP CONF PROC, V449, P235

[4] Fermi-level pinning at the polysilicon/metal oxide interface - Part I [J].

Hobbs, CC ;

Fonseca, LRC ;

Knizhnik, A ;

Dhandapani, V ;

Samavedam, SB ;

Taylor, WJ ;

Grant, JM ;

Dip, LG ;

Triyoso, DH ;

Hegde, RI ;

Gilmer, DC ;

Garcia, R ;

Roan, D ;

Lovejoy, ML ;

Rai, RS ;

Hebert, EA ;

Tseng, HH ;

Anderson, SGH ;

White, BE ;

Tobin, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :971-977

[5] Threshold voltage control in NiSi-gated MOSFETs through SIIS [J].

Kedzierski, J ;

Boyd, D ;

Cabral, C ;

Ronsheim, P ;

Zafar, S ;

Kozlowski, PM ;

Ott, JA ;

Ieong, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (01) :39-46

[6]

Lee J, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P323

[7]

Lee J, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P359, DOI 10.1109/IEDM.2002.1175852

[8] Work function engineering of molybdenum gate electrode by nitrogen implantation [J].

Ranade, P ;

Takeuchi, H ;

King, TJ ;

Hu, CM .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (11) :G85-G87

[9]

SCHAEFFER JK, 2004, INT EL DEV M

[10]

TAKAHASHI K, 2004, INT EL DEV M

← 1 2 →