Threshold voltage control in NiSi-gated MOSFETs through SIIS

被引：49

作者：

Kedzierski, J ^{[1
]}

Boyd, D

Cabral, C

Ronsheim, P

Zafar, S

Kozlowski, PM

Ott, JA

Ieong, M

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Microelect, SRDC, Hopewell Jct, NY 12533 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 01期

关键词：

dual silicidation; full silicidation (FUSI); gate workfunction; metal gate; mid-gap gate; NiSi; silicidation-induced impurity segregation (SIIS); silicide gate; thin body; threshold voltage; transistor scaling; ultrathin body; undoped body; work-function engineering;

D O I：

10.1109/TED.2004.841264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Complete gate silicidation has recently been demonstrated as an excellent technique for the integration of metal gates into MOSFETs. From the various silicide gate materials NiSi has been shown to be the most scalable. In this paper, a versatile method for controlling the workfunction of an NiSi gate is presented. This method relies on doping the poly-Si with various impurities prior to silicidation. The effect of various impurities including B, P, As, Sb, In, and Al is described. The segregation of the impurities from the poly-Si to the silicide interface during the silicidation step is found to cause the NiSi workfunction shift. The effect of the segregated impurities on gate capacitance, mobility, local workfunction stability, and adhesion is studied.

引用

页码：39 / 46

页数：8

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