PHOSPHORUS REDISTRIBUTION DURING NICKEL SILICIDE FORMATION

被引：6

作者：

KIKUCHI, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：938 / 940

页数：3

共 8 条

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[3] REDISTRIBUTION OF IMPLANTED PHOSPHORUS AFTER PLATINUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES [J].

KIKUCHI, A ;

SUGAKI, S .

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[4] ELECTRON-TRANSPORT ACROSS ALUMINUM ULTRATHIN SILICON-OXIDE PHOSPHORUS IMPLANTED SILICON BARRIERS [J].

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NAKATA, K .

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[5]

KIKUCHI A, UNPUB

[6] BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON [J].

OTTAVIANI, G ;

TU, KN ;

MAYER, JW .

PHYSICAL REVIEW B, 1981, 24 (06) :3354-3359

[7] EFFECTS OF VARIATIONS OF SILICIDE CHARACTERISTICS ON THE SCHOTTKY-BARRIER HEIGHT OF SILICIDE-SILICON INTERFACES [J].

SCHMID, PE ;

HO, PS ;

FOLL, H ;

TAN, TY .

PHYSICAL REVIEW B, 1983, 28 (08) :4593-4601

[8] REDISTRIBUTION OF IMPLANTED DOPANTS AFTER METAL-SILICIDE FORMATION [J].

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