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ELECTRON-TRANSPORT ACROSS ALUMINUM ULTRATHIN SILICON-OXIDE PHOSPHORUS IMPLANTED SILICON BARRIERS
被引:9
作者
:
KIKUCHI, A
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
KIKUCHI, A
[
1
]
YAMAMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
YAMAMOTO, H
[
1
]
IWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
IWATA, S
[
1
]
IKEDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
IKEDA, T
[
1
]
NAKATA, K
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
NAKATA, K
[
1
]
机构
:
[1]
HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN
来源
:
JOURNAL OF APPLIED PHYSICS
|
1980年
/ 51卷
/ 09期
关键词
:
D O I
:
10.1063/1.328364
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:4913 / 4918
页数:6
相关论文
共 14 条
[1]
[Anonymous], 1957, RECTIFYING SEMICONDU
[2]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
: 1589
-
+
[3]
NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
CROWELL, CR
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
RIDEOUT, VL
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 89
-
&
[4]
RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Departments of Materials Science, Electrical Engineering University of Southern California, Los Angeles, CA
CROWELL, CR
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(01)
: 55
-
&
[5]
SI-SIO2 INTERFACE CHARACTERIZATION BY ESCA
ISHIZAKA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo
ISHIZAKA, A
IWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo
IWATA, S
KAMIGAKI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo
KAMIGAKI, Y
[J].
SURFACE SCIENCE,
1979,
84
(02)
: 355
-
374
[6]
FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
PADOVANI, FA
论文数:
0
引用数:
0
h-index:
0
PADOVANI, FA
STRATTON, R
论文数:
0
引用数:
0
h-index:
0
STRATTON, R
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(07)
: 695
-
&
[7]
ROLE OF OXYGEN IN THE MECHANISM OF FORMATION OF SCHOTTKY DIODES
PONPON, JP
论文数:
0
引用数:
0
h-index:
0
PONPON, JP
SIFFERT, P
论文数:
0
引用数:
0
h-index:
0
SIFFERT, P
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(12)
: 6004
-
6011
[8]
ELECTRICAL EFFECT ON SCHOTTKY-BARRIER DIODES OF SI CRYSTALLIZATION FROM AL-SI METAL-FILMS
REITH, TM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,HOPEWELL JUNCTION,NY 12533
IBM CORP,HOPEWELL JUNCTION,NY 12533
REITH, TM
SCHICK, JD
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,HOPEWELL JUNCTION,NY 12533
IBM CORP,HOPEWELL JUNCTION,NY 12533
SCHICK, JD
[J].
APPLIED PHYSICS LETTERS,
1974,
25
(09)
: 524
-
526
[9]
THERMIONIC-FIELD EMISSION THROUGH SILICON SCHOTTKY BARRIERS AT ROOM-TEMPERATURE
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,REDHILL,SURREY,ENGLAND
PHILIPS RES LABS,REDHILL,SURREY,ENGLAND
SHANNON, JM
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(10)
: 869
-
872
[10]
THEORY OF FIELD EMISSION FROM SEMICONDUCTORS
STRATTON, R
论文数:
0
引用数:
0
h-index:
0
STRATTON, R
[J].
PHYSICAL REVIEW,
1962,
125
(01):
: 67
-
&
←
1
2
→
共 14 条
[1]
[Anonymous], 1957, RECTIFYING SEMICONDU
[2]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
: 1589
-
+
[3]
NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
CROWELL, CR
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
RIDEOUT, VL
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 89
-
&
[4]
RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Departments of Materials Science, Electrical Engineering University of Southern California, Los Angeles, CA
CROWELL, CR
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(01)
: 55
-
&
[5]
SI-SIO2 INTERFACE CHARACTERIZATION BY ESCA
ISHIZAKA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo
ISHIZAKA, A
IWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo
IWATA, S
KAMIGAKI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo
KAMIGAKI, Y
[J].
SURFACE SCIENCE,
1979,
84
(02)
: 355
-
374
[6]
FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
PADOVANI, FA
论文数:
0
引用数:
0
h-index:
0
PADOVANI, FA
STRATTON, R
论文数:
0
引用数:
0
h-index:
0
STRATTON, R
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(07)
: 695
-
&
[7]
ROLE OF OXYGEN IN THE MECHANISM OF FORMATION OF SCHOTTKY DIODES
PONPON, JP
论文数:
0
引用数:
0
h-index:
0
PONPON, JP
SIFFERT, P
论文数:
0
引用数:
0
h-index:
0
SIFFERT, P
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(12)
: 6004
-
6011
[8]
ELECTRICAL EFFECT ON SCHOTTKY-BARRIER DIODES OF SI CRYSTALLIZATION FROM AL-SI METAL-FILMS
REITH, TM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,HOPEWELL JUNCTION,NY 12533
IBM CORP,HOPEWELL JUNCTION,NY 12533
REITH, TM
SCHICK, JD
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,HOPEWELL JUNCTION,NY 12533
IBM CORP,HOPEWELL JUNCTION,NY 12533
SCHICK, JD
[J].
APPLIED PHYSICS LETTERS,
1974,
25
(09)
: 524
-
526
[9]
THERMIONIC-FIELD EMISSION THROUGH SILICON SCHOTTKY BARRIERS AT ROOM-TEMPERATURE
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,REDHILL,SURREY,ENGLAND
PHILIPS RES LABS,REDHILL,SURREY,ENGLAND
SHANNON, JM
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(10)
: 869
-
872
[10]
THEORY OF FIELD EMISSION FROM SEMICONDUCTORS
STRATTON, R
论文数:
0
引用数:
0
h-index:
0
STRATTON, R
[J].
PHYSICAL REVIEW,
1962,
125
(01):
: 67
-
&
←
1
2
→