ELECTRICAL EFFECT ON SCHOTTKY-BARRIER DIODES OF SI CRYSTALLIZATION FROM AL-SI METAL-FILMS

被引：59

作者：

REITH, TM ^{[1
]}

SCHICK, JD ^{[1
]}

机构：

[1] IBM CORP,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 09期

关键词：

D O I：

10.1063/1.1655575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：524 / 526

页数：3

相关论文

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